Method for etching a group III nitride semiconductor, method for producing a group III nitride semiconductor crystal, and method for producing a GaN substrate

摘要

A mask layer is formed on a Ga polarity surface of the GaN substrate as a growth substrate. Subsequently, a protective film PF is formed on a N polarity surface of the GaN substrate. Then, a plurality of concave portions is formed from the mask layer extending to the GaN substrate, to thereby form a seed crystal. The seed crystal is etched in a Na melt, and a plurality of concave portions having a facet plane exposed. The seed crystal and the raw materials are placed in a crucible, and the pressure and temperature inside the crucible are increased. Thus, a target GaN layer is grown in the upward direction on the surface of the mask layer and the lateral direction over the concave portions.

主权项

1. A method for etching a Group III nitride semiconductor, the method comprising:
forming a protective film on a first surface being a N polarity surface of the Group III nitride semiconductor; and etching at least a portion of a second surface of the Group III nitride semiconductor in a melt containing at least Na.