| 摘要 |
A semiconductor device comprises: memory blocks including first selection transistors connected to a common source line, second selection transistors connected to a bit line, and memory cells connected between the first selection transistors and the second selection transistors; and an operational circuit configured to apply voltages necessary for a program operation, a read operation, and an erase operation to a selected memory block, and to apply a first positive voltage to gates of the first selection transistors included in unselected memory blocks when applying an erase voltage to the common source line during the erase operation. |
