Light source apparatus and light emitting diode package

摘要

There is provided a light source apparatus including at least one light emitting diode (LED) string including at least one light emitting diode and at least one inductance unit for generating an induced current according to a change in a current applied to the light emitting diode. A main switch controls power applied to the LED string according to an on/off switching operation A capacitor is charged with a voltage of the power applied to the LED string when the main switch is switched on, and applies the charged voltage to the LED string when the main switch is switched off.

主权项

1. A light source apparatus comprising:
at least one light emitting diode (LED) string including at least one light emitting diode and at least one inductance unit configured for generating an induced current according to a change in a current applied to the light emitting diode; a main switch configured for controlling power applied to the LED string according to an on/off switching operation; and a capacitor charged with a voltage of the power applied to the LED string when the main switch is switched on and configured for applying the charged voltage to the LED string when the main switch is switched off, wherein the LED comprises:
a light emitting laminate including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer; andfirst and second electrodes electrically connected to the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, respectively, wherein the first electrode includes a plurality of conductive vias connected to the first conductivity-type semiconductor layer through the second conductivity-type semiconductor layer and the active layer, a radius of each of the plurality of conductive vias ranges from 5 um to 50 μm, a space between conductive vias ranges from 100 μm to 500 μm, a sum total of the areas of the plurality of conductive vias in contact with the first conductivity-type semiconductor layer ranges from 1% to 5% of the area of the interface between the first conductivity-type semiconductor layer and the active layer, and the plurality of conductive vias are disposed in rows and columns within the light emitting laminate.