Thermally optimized phase change memory cells and methods of fabricating the same

摘要

A thermally optimized phase change memory cell includes a phase change material element disposed between first and second electrodes. The second electrode includes a thermally insulating region having a first thermal resistivity over the first electrode and a metallic contact region interposed between the phase change material element and the thermally insulating region, where the metallic contact layer has a second thermal resistivity lower than the first thermal resistivity.

主权项

1. An electronic device comprising:
a first electrode; a phase change material element disposed on the first electrode; and a second electrode disposed on the phase change material element, the second electrode comprising a thermally insulating region, the thermally insulating region comprising carbon and having a first thermal resistivity, and a metallic contact region interposed between the phase change material element and the thermally insulating region, the metallic contact region having a second thermal resistivity lower than the first thermal resistivity, wherein the first electrode, the second electrode and the phase change material element have dimensions and electrical resistivities such that an electrical resistance of a bulk material of the phase change material element is greater than a combined electrical resistances of a bulk material of the thermally insulating region, a bulk material of the metallic contact region and an interface between the metallic contact region and the phase change material element.