Semiconductor device and method of manufacturing the same

摘要

A gate insulating film of a conventional semiconductor device is subjected to dielectric breakdown at a low electric field strength and thus its service life is short. This is because since the size of the asperity of at least one of a semiconductor layer-side interface and an electrode-side interface is large and, an electric field applied to the gate insulating film is locally concentrated and has a variation in its strength. This problem is solved by specifying the sizes of the asperities of both interfaces of the gate insulating film.

主权项

1. A semiconductor device comprising:
a semiconductor layer; a gate insulating film in contact with the semiconductor layer with an interface formed therebetween; and a gate electrode layer in contact with the insulating film with an interface formed therebetween on a side opposite to the semiconductor layer, wherein asperity of the interface between the semiconductor layer and the gate insulating film and asperity of the interface between the gate insulating film and the gate electrode layer each have a size which decreases correspondingly as a thickness of the gate insulating film decreases in a region of a length of 1 μm in a direction parallel to a direction in which the gate insulating film extends; wherein the size of the asperity of the interface between the semiconductor layer and the gate insulating film is 10% or less of the thickness of the gate insulating film and the size of the asperity of the interface between the gate insulating film and the gate electrode layer is 10% or less of the thickness of the gate insulating film.