Thin film transistor array panel and method of manufacturing the same

摘要

A thin film transistor array panel includes a substrate; a gate line located over the substrate and including a gate pad portion; a data line located over the gate line and including a source electrode and a data pad portion; a drain electrode; a first passivation layer located over the data line and the drain electrode; an organic insulating layer located over the first passivation layer and having a contact hole; a first field generating electrode located over the organic insulating layer and having an opening; a second passivation layer located over the first field generating electrode; and a second field generating electrode located over the second passivation layer. The contact hole coincides with or is smaller than the opening, and the contact hole has a tapered structure.

主权项

1. A method of manufacturing a thin film transistor array panel, comprising:
forming a gate line and a data line over an insulation substrate; forming an organic layer over the gate line and the data line; stacking a conductive layer over the organic layer; forming a first photosensitive film pattern over the conductive layer; forming a first field generating electrode by etching the conductive layer using the first photosensitive film pattern as a mask; deforming at least a portion of the first photosensitive film pattern to contact the organic layer; and forming an organic insulating layer including at least a contact hole by etching the organic layer using the first photosensitive film pattern as a mask.