发明名称 SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor device which suppresses negative resistance.SOLUTION: A semiconductor device of an embodiment comprises: a first semiconductor region provided between a first electrode and a second electrode; a second semiconductor region provided between the first electrode and the first semiconductor region; a third semiconductor region and a fourth semiconductor region which are provided between the first electrode and the second semiconductor region and arranged in a second direction; a fifth semiconductor region which is located between the third semiconductor region and the second electrode and provided between the first semiconductor region and the second electrode; a sixth semiconductor region which is located between the fourth semiconductor region and the second electrode and provided between the first semiconductor region and the second electrode; a seventh semiconductor region provided between the fifth semiconductor region and the second electrode; and a third electrode which contacts the seventh semiconductor region, the fifth semiconductor region and the first semiconductor region via a first insulation film.
申请公布号 JP2015177057(A) 申请公布日期 2015.10.05
申请号 JP20140052702 申请日期 2014.03.14
申请人 TOSHIBA CORP 发明人 OGURA TSUNEO
分类号 H01L29/739;H01L27/04;H01L29/78 主分类号 H01L29/739
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