| 摘要 |
PROBLEM TO BE SOLVED: To provide a metal wiring formation method which allows for formation of a metal wiring excellent in the reliability.SOLUTION: In a metal wiring formation method, a metal layer and an organic antireflection film are laminated, in this order, on a semiconductor substrate, a resist pattern containing carbon is formed on the surface of the organic antireflection film, the organic antireflection film exposed from the resist pattern is etched by using a fluorine-based gas not containing oxygen and, at the same time, a sidewall protective film is formed on the sidewall of the resist pattern, and then the metal layer exposed from the resist pattern is etched by using the resist pattern, on which the sidewall protective film is formed, as a mask. |
