| 摘要 |
PROBLEM TO BE SOLVED: To provide a high performance thin film transistor excellent in reliability, and to provide a highly reliable high performance display device using the same.SOLUTION: In a display device having a gate electrode formed on a substrate, a gate insulating film formed to cover the substrate and the gate electrode, an oxide semiconductor layer formed on the gate electrode via the gate insulating film, a channel protection film formed on the oxide semiconductor layer in contact therewith, and a source-drain electrode connected electrically with the oxide semiconductor layer, and formed to cover the oxide semiconductor layer, a metal oxide layer is formed on the channel protection film, and the source-drain electrode is formed so as to be divided on the channel protection film and metal oxide layer. |
