Method for Manufacturing Array Substrate, Array Substrate, and Display Device

摘要

The present invention relates to the field of liquid crystal display, and provides a method for manufacturing an array substrate, the array substrate, and a display device. In the array substrate, a gate insulating layer between source and drain electrodes and a pattern of a gate electrode has a thickness greater than that of the gate insulating layer between an active layer and the pattern of the gate electrode. Due to the thick gate insulating layer between the source and drain electrodes and the pattern of the gate electrodes, the capacitance between the source and drain electrodes and the gate electrodes will be reduced. As a result, it is able to reduce the capacity of capacitors corresponding to the source electrode and the drain electrode respectively and reduce the load of a pixel, thereby to reduce the power consumption of the entire display device without affecting a display effect of the array substrate.

主权项

1. A method for manufacturing an array substrate, comprising:
subjecting a gate insulating layer in a region between a source electrode and a drain electrode to a partial etching treatment by a one-time patterning process; forming an active layer by a one-time patterning process, the active layer covering a partially-etched region of the gate insulating layer; and forming a pattern of a gate electrode by a one-time patterning process, the pattern of the gate electrode covering the partially-etched region of the gate insulating layer and a region of the gate insulating layer corresponding to the source and drain electrodes, wherein the pattern of the gate electrode and the active layer are located at different sides of the gate insulating layer, and the gate insulating layer between the source and drain electrodes and the pattern of the gate electrode has a thickness greater than that of the gate insulating layer between the active layer, located between the source electrode and the drain electrode, and the pattern of the gate electrode.