发明名称 CHIP PACKAGE, USE AND METHOD OF MAKING THEREO
摘要 A method of forming a chip package portion having a reduced loading effect between various metal lines during a leveling process comprises forming a first layer, a passivation layer over the first layer, a second layer over the passivation layer, and a third layer over the second layer. The method also comprises forming a patterned opening having multiple depths by removing portions of the first layer, the passivation layer, the second layer, and the third layer by way of one or more removal processes that remove portions of the first layer, the passivation layer, the second layer, and the third layer in accordance with one or more patterned photoresist depositions. The method further comprises depositing a material into the patterned opening, and leveling the material deposited into the patterned opening
申请公布号 US2015279769(A1) 申请公布日期 2015.10.01
申请号 US201414231123 申请日期 2014.03.31
申请人 Taiwan Semiconductor Manufacturing Company, Ltd. 发明人 KUO Gwo-Chyuan;YANG Han-Wei;LAI Chen-Chung
分类号 H01L23/498;H01L23/15;H01L21/48 主分类号 H01L23/498
代理机构 代理人
主权项 1. A method comprising: forming a first layer; forming a passivation layer over the first layer; forming a second layer over the passivation layer; forming a third layer over the second layer; depositing a first patterned photoresist over the third layer, the first patterned photoresist exposing a first portion of the third layer; removing the first portion of the third layer and a first portion of the second layer beneath the first portion of the third layer to expose a first portion of the passivation layer; depositing a second patterned photoresist over some of the remaining third layer and the first portion of the passivation layer after removal of the first portion of the third layer and the first portion of the second layer; removing one or more remaining portions of the third layer left exposed by the second patterned photoresist, one or more remaining portions of the second layer, one or more portions of the passivation layer, and one or more portions of the first layer beneath the one or more remaining portions of the third layer left exposed by the second patterned photoresist to form a patterned opening having multiple depths; depositing a material into the patterned opening; and leveling the material deposited into the patterned opening.
地址 Hsinchu TW