| 摘要 |
Provided are a method and apparatus for forming a silicon oxide film, capable of suppressing the generation of a void or seam. The method for forming the silicon oxide film includes: a silicon film forming step of forming a silicon film (55) in a groove of a semiconductor wafer (W); an etching step of etching the silicon film (55); an oxidizing step of forming the silicon oxide film by oxidizing the etched silicon film (55); and a filling step of forming the silicon oxide film to fill the groove (53) of the semiconductor wafer (W) while covering the formed silicon oxide film. |
