NON-POLAR BLUE LED EPITAXIAL WAFER BASED ON LAO SUBSTRATE AND PREPARATION METHOD THEREFOR

摘要

A non-polar blue LED epitaxial wafer based on an LAO substrate and the preparation method therefor. The preparation method comprises the following steps: a) using the LAO substrate (10), selecting the crystal orientation, and cleaning the surface of the LAO substrate (S1); b) annealing the LAO substrate, and forming an AlN seed crystal layer on the surface of the LAO substrate (S2); and c) sequentially forming a non-polar m side GaN buffer layer (11), a non-polar non-doped u-GaN layer (12), a non-polar n-type doped GaN film (13), a non-polar InGaN/GaN quantum well (14), a non-polar m side AlGaN electron barrier layer (15) and a non-polar p-type doped GaN film (16) on the LAO substrate by using metallo-organic chemical vapor deposition (S3). With the non-polar blue LED epitaxial wafer based on the LAO substrate and the preparation method thereof, the non-polar blue LED epitaxial wafer has the advantages of low defect density, good crystal quality and good luminous performance; and the preparation cost is low.