STRAINED CHANNEL FOR DEPLETED CHANNEL SEMICONDUCTOR DEVICES

摘要

A planar semiconductor device including a semiconductor on insulator (SOI) substrate with source and drain portions having a thickness of less than 10 nm that are separated by a multi-layered strained channel. The multi-layer strained channel of the SOI layer includes a first layer with a first lattice dimension that is present on the buried dielectric layer of the SOI substrate, and a second layer of a second lattice dimension that is in direct contact with the first layer of the multi-layer strained channel portion. A functional gate structure is present on the multi-layer strained channel portion of the SOI substrate. The semiconductor device having the multi-layered channel may also be a finFET semiconductor device.

主权项

1. A method of forming a finFET comprising:
providing at least one fin structure having a first width, wherein the at least one fin structure is composed of a first semiconductor material; forming a replacement structure straddling a channel portion of the at least one fin structure; forming source and drain regions on exposed sidewalls of the at least one fin structure on opposite sides of the replacement gate structure; removing the replacement gate structure to expose the channel portion of the at least one fin structure; etching the channel portion of the at least one fin structure to have a second width that is less than the first width; depositing an epitaxially grown semiconductor layer of a second semiconductor material that is different from the first material on the channel portion of at least one fin structure, in which a lattice dimension of the epitaxially grown semiconductor layer is different than a lattice dimension of the channel portion of the at least one fin structure to provide a strained channel; and forming a functional gate structure on the strained channel.