Semiconductor Substrate Cleaning Method and Cleaning System

摘要

A method and system for cleaning a semiconductor substrate in which Al is at least partially exposed on a silicon substrate and which is silicided with a metallic substance, without damaging Al and a silicide layer, comprising a cleaning portion (2) for cleaning a semiconductor substrate 100 in which Al is at least partially exposed on a silicon substrate and which is silicided with a metallic substance; a delivery portion (30) disposed in the cleaning portion for delivering a cleaning solution to the semiconductor substrate in the cleaning portion to bring the cleaning solution into contact with the semiconductor substrate; a sulfuric acid solution transfer path (5) connected to the delivery portion for transferring a sulfuric acid solution comprising an oxidant to the delivery portion; and an adsorptive inhibitor solution transfer path (11) connected to the delivery portion for transferring a solution comprising an adsorptive inhibitor having any one or more of N-based, S-based, and P-based polar groups to the delivery portion. The sulfuric acid solution and the adsorptive inhibitor solution may be mixed or separately transferred to come into contact with or on the semiconductor substrate.

主权项

1. A method for cleaning a semiconductor substrate in which Al is at least partially exposed on a silicon substrate and which is silicided with a metallic substance, comprising:
bringing the semiconductor substrate into contact with a first solution comprising one or more adsorptive inhibitors having any one or more of N-based, S-based, and P-based polar groups; and cleaning the semiconductor substrate with a second solution comprising as a cleaning component a sulfuric acid solution comprising an oxidant.