PHOTOLITHOGRAPHIC METHOD FOR FORMING A COATING LAYER

摘要

A method for forming a coating layer includes spraying coating material having a first flowability onto a substrate; performing a first spin coating process with a first spin speed to form an initial coating layer; and performing a first baking process to the initial coating layer to form a first material layer having a second flowability and a second material layer having a third flowability. The third flowability is less than the first flowability but larger than the second flowability, which is less than the first flowability. Further, the method includes performing a second spin coating process with a second spin speed to drive the coating material in the second material layer flowing on the surface of the first material layer to form a third material layer with a uniform thickness, and performing a second baking process to form a final coating layer on the substrate.

主权项

1. A photolithographic method for forming a coating layer, comprising:
spraying coating material having a first flowability to a top surface of a provided semiconductor substrate; performing a first spin coating process by rotating the semiconductor substrate with a first spin speed to form an initial coating layer covering the top surface of the semiconductor substrate; performing a first baking process to the initial coating layer to form a first material layer having a second flowability and a second material layer having a third flowability, wherein the second flowability is less than the first flowability and the third flowability is larger than the second flowability but less than the first flowability; performing a second spin coating process by rotating the semiconductor substrate with a second spin speed to drive the coating material in the second material layer flowing on the surface of the first material layer to form a third material layer with a uniform thickness; and performing a second baking process to the first material layer and the third material layer to form a final coating layer on the top surface of the semiconductor substrate.