MULTI-GATE THIN FILM TRANSISTOR, ARRAY SUBSTRATE AND DISPLAY DEVICE

摘要

The present invention discloses a multi-gate thin film transistor for realizing a multi-gate occupying a small area, pixels provided with the multi-gate TFTs are high in aperture ratio, and a display device provided with the multi-gate TFTs is high in resolution. The multi-gate thin film transistor comprises: at least three gate electrodes; a plurality of active layers corresponding to each of the gate electrodes, respectively, the active layers being formed into an integrated structure; a source electrode connected with one of the plurality of active layers; and a plurality of drain electrodes connected with each of the remainder of the plurality of active layers, respectively. The present invention further discloses an array substrate comprising the multi-gate thin film transistor, and a display device.

主权项

1. A multi-gate thin film transistor, comprising:
at least three gate electrodes; a plurality of active layers co desponding to each of the gate electrodes, respectively, the active layers being formed into an integrated structure; a source electrode connected with one of the plurality of active layers; and a plurality of chain electrodes connected with each of the rest of the plurality of active layers, respectively.