ANNEALING OXIDE GATE DIELECTRIC LAYERS FOR REPLACEMENT METAL GATE FIELD EFFECT TRANSISTORS

摘要

A method of manufacturing a semiconductor structure by forming an oxide layer above a substrate; optionally annealing the oxide layer to densify the oxide layer; forming a first sacrificial gate above the substrate; removing the first dummy gate; optionally annealing the first gate oxide layer; and forming a first replacement metal gate above the gate oxide layer. In some embodiments selective nitridation may be performed during the annealing step.

主权项

1. A method of manufacturing a semiconductor structure, the method comprising:
forming an oxide layer above a substrate; annealing the oxide layer to densify the oxide layer; forming a first sacrificial gate comprising a first gate oxide layer and a first dummy gate above the substrate, wherein forming the first sacrificial gate comprises:
depositing a dummy gate layer above the oxide layer;etching the dummy gate layer to form the first dummy gate; andetching the oxide layer to form the first gate oxide layer separating the first dummy gate from the substrate, removing the first dummy gate of the first sacrificial gate; annealing the first gate oxide layer; and forming a first replacement metal gate above the gate oxide layer.