CAAC IGZO Deposited at Room Temperature

摘要

A co-sputter technique is used to deposit In—Ga—Zn—O films using PVD. The films are deposited in an atmosphere including both oxygen and argon. A heater setpoint of about 300 C results in a substrate temperature of about 165 C. One target includes an alloy of In, Ga, Zn, and O with an atomic ratio of In:Ga:Zn of about 1:1:1. The second target includes a compound of zinc oxide. The third target includes a compound of indium oxide. The films exhibit the c-axis aligned crystalline (CAAC) phase in an as-deposited state, when deposited at room temperature, without the need of a subsequent anneal treatment.

主权项

1. A method comprising:
providing a substrate; providing a first physical vapor deposition target, wherein the first physical vapor deposition target comprises indium, gallium, and zinc; providing a second physical vapor deposition target, wherein the second physical vapor deposition target comprises zinc; providing a third physical vapor deposition target, wherein the third physical vapor deposition target comprises indium; forming a metal-based semiconductor layer above a surface of the substrate, wherein the forming is performed using the first physical vapor deposition target, the second physical vapor deposition target, and the third physical vapor deposition target.