PROCESS FOR GROWING AT LEAST ONE NANOWIRE USING A TRANSITION METAL NITRIDE LAYER OBTAINED IN TWO STEPS

摘要

The process for growing at least one semiconductor nanowire (3), said growth process comprising a step of forming, on a substrate (1), a nucleation layer (2) for the growth of the nanowire (3) and a step of growth of the nanowire (3). The step of formation of the nucleation layer (2) comprises the following steps: deposition onto the substrate (1) of a layer of a transition metal (4) chosen from Ti, V, Cr, Zr, Nb, Mo, Hf, Ta; nitridation of at least a part (2) of the transition metal layer so as to form a transition metal nitride layer having a surface intended for growing the nanowire (3).

主权项

1. A process for growing at least one semiconductor nanowire, said growing process comprising:
forming, on a substrate, a nucleation layer for the growth of the nanowire, and growing the nanowire, wherein the step of forming the nucleation layer comprises:
depositing onto the substrate a layer of a transition metal chosen from Ti, V, Cr, Zr, Nb, Mo, Hf, and Ta, andperforming nitridation of at least part of the transition metal layer so as to form a transition metal nitride layer having a surface intended for the growth of the nanowire.