发明名称 SUBSTRATE-PROCESSING DEVICE, SEMICONDUCTOR-DEVICE MANUFACTURING METHOD, AND FURNACE-THROAT COVER
摘要 [Problem] To provide a technology that can inhibit the adhesion of byproducts and the generation of particles. [Solution] This invention is provided with a reaction tube in which a substrate is processed, a furnace throat installed at the bottom end of said reaction tube, a cover, and one or more gas-supply units. A recess and a projection in which at least one notch that connects the recess to the inside surface of the furnace throat is formed are formed along the circumference of the inside-surface side of the top surface of the furnace throat. The cover is installed at a prescribed distance from the inside surface of the furnace throat and covers at least said inside surface. The one or more gas-supply units supply a gas to the recess in the furnace throat.
申请公布号 WO2015146362(A1) 申请公布日期 2015.10.01
申请号 WO2015JP54138 申请日期 2015.02.16
申请人 HITACHI KOKUSAI ELECTRIC INC. 发明人 TAKAGI, KOSUKE;MORITA, SHINYA;AKAE, NAONORI;YAMAZAKI, KEISHIN
分类号 H01L21/31;C23C16/44 主分类号 H01L21/31
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