发明名称 |
SUBSTRATE-PROCESSING DEVICE, SEMICONDUCTOR-DEVICE MANUFACTURING METHOD, AND FURNACE-THROAT COVER |
摘要 |
[Problem] To provide a technology that can inhibit the adhesion of byproducts and the generation of particles. [Solution] This invention is provided with a reaction tube in which a substrate is processed, a furnace throat installed at the bottom end of said reaction tube, a cover, and one or more gas-supply units. A recess and a projection in which at least one notch that connects the recess to the inside surface of the furnace throat is formed are formed along the circumference of the inside-surface side of the top surface of the furnace throat. The cover is installed at a prescribed distance from the inside surface of the furnace throat and covers at least said inside surface. The one or more gas-supply units supply a gas to the recess in the furnace throat. |
申请公布号 |
WO2015146362(A1) |
申请公布日期 |
2015.10.01 |
申请号 |
WO2015JP54138 |
申请日期 |
2015.02.16 |
申请人 |
HITACHI KOKUSAI ELECTRIC INC. |
发明人 |
TAKAGI, KOSUKE;MORITA, SHINYA;AKAE, NAONORI;YAMAZAKI, KEISHIN |
分类号 |
H01L21/31;C23C16/44 |
主分类号 |
H01L21/31 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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