VERTICAL TRANSISTOR AND MANUFACTURING METHOD THEREOF

摘要

A vertical transistor and a manufacturing method thereof are provided herein. The manufacturing method includes forming a first patterned conductive layer on a substrate; forming a patterned metal oxide layer on the first patterned conductive layer, in which the patterned metal oxide layer includes a first patterned insulator layer, a second patterned insulator layer, and a second patterned conductive layer; forming a semiconductor layer; and forming a third patterned conductive layer. The first patterned insulator layer, the second patterned insulator layer, and the second patterned conductive layer are made by using a single metal oxide material. The oxygen concentration of the second patterned conductive layer is different from the oxygen concentrations of the first patterned insulator layer and the second patterned insulator layer.

主权项

1. A manufacturing method of a vertical transistor comprising:
forming a first patterned conductive layer on a substrate; forming a patterned metal oxide layer on the first patterned conductive layer, wherein the patterned metal oxide layer comprises a first patterned insulator layer, a second patterned insulator layer, and a second patterned conductive layer, and the second patterned conductive layer is interposed between the first patterned insulator layer and the second patterned insulator layer; forming a semiconductor layer; and forming a third patterned conductive layer, wherein the semiconductor layer is interposed between the first patterned conductive layer and the third patterned conductive layer; wherein the first patterned insulator layer, the second patterned insulator layer, and the second patterned conductive layer are made by using a single metal oxide material, and the oxygen concentration of the second patterned conductive layer is different from the oxygen concentrations of the first patterned insulator layer and the second patterned insulator layer.