| 摘要 |
Provided is a tantalum sputtering target characterized in that the orientation rate of the (100) plane of the sputter surface thereof is 30-90% and the orientation rate of the (111) plane is 50% or less. Also provided is a tantalum sputtering target production method characterized in that: a melted and cast tantalum ingot is forged, subjected to recrystallization annealing, and subsequently rolled and subjected to heat treatment; and a crystal structure is formed in which the orientation rate of the (100) plane of a tantalum sputtering target is 30-90% and the orientation rate of the (111) plane is 50% or less. By controlling the crystal orientation of the target, the integral power consumption during burn-in of the tantalum target is reduced, it becomes easier to generate plasma, film formation speed is stabilized, and the effect of reducing resistance variation in a film is achieved. |
