| 摘要 |
A member for semiconductor production device comprises a susceptor (10), which is an AlN ceramic plate, and a gas inlet pipe (20) joined to the susceptor (10). In the susceptor (10), a circular pipe-joining bank (14) is formed at a position that faces the gas inlet pipe (20) flange (22). In addition, a pipe soldering portion (24) is formed between the flange (22) and the pipe-joining bank (14). The flange (22) has a width of 3 mm or larger and a thickness of between 0.5 mm and 2 mm inclusive. The pipe-joining bank (14) has a height of preferably 0.5 mm or greater, and material removal at the corner that faces the external edge of the flange (22) is performed preferably to an extent of C0.3 or more in the case of chamfering, and to a radius of R0.3 or greater in the case of rounding. |
