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发明名称
形成磁性穿隧接面的方法;METHOD OF FORMING MAGNETIC TUNNELING JUNCTIONS
摘要
本发明揭露了一种MRAM位元的制造方法,包括沉积一间隔层,用以在处理过程中保护穿隧阻障层。所沉积的间隔层防止了在后续处理中形成的副产物再沉积于穿隧阻障层上。此等再沉积会造成产品失败和降低制造产率。此方法更包括非侵蚀性处理条件,用以防止对MRAM位元层造成损伤。此非侵蚀性处理条件可包括不使用卤素类电浆来进行蚀刻。本发明揭露的实施例采用了简化制程的蚀刻-沉积-蚀刻顺序。
申请公布号
TW201537743
申请公布日期
2015.10.01
申请号
TW104106531
申请日期
2015.03.02
申请人
应用材料股份有限公司 APPLIED MATERIALS, INC.
发明人
帕卡拉玛亨德拉 PAKALA, MAHENDRA;巴赛诺米海拉 BALSEANU, MIHAELA;爵曼强纳森 GERMAIN, JONATHAN;安在洙 AHN, JAESOO;薛林 XUE, LIN
分类号
H01L27/22(2006.01);H01L43/02(2006.01);H01L43/12(2006.01)
主分类号
H01L27/22(2006.01)
代理机构
代理人
蔡坤财李世章
主权项
地址
美国 US
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