Power Semiconductor Device with Embedded Field Electrodes

摘要

A power semiconductor device is disclosed. The power semiconductor device includes an upper drift region situated over a lower drift region, a field electrode embedded in the lower drift region, the field electrode not being directly aligned with a gate trench in a body region of the power semiconductor device, where respective top surfaces of the field electrode and the lower drift region are substantially co-planar. A conductive filler in the field electrode can be substantially uniformly doped, and the field electrode is in direct electrical contact with the upper drift region.

主权项

1. A power semiconductor device comprising:
an upper drift region situated over a lower drift region; a plurality of field electrode embedded in said lower drift region; at least one of said plurality of field electrode not being directly aligned with a gate trench in a body region of said power semiconductor device; wherein respective top surfaces of said at least one of said plurality of field electrode and said lower drift region are substantially co-planar.