Bonding Structure for Stacked Semiconductor Devices

摘要

A semiconductor device, and a method of fabrication, is introduced. In an embodiment, one or more passivation layers are formed over a first substrate. Recesses are formed in the passivation layers and a first bonding pad, a second bonding pad, and a first via are formed in the recesses. In some embodiment, the first via may have electrical contact with the first bonding pad and may provide an electrical pathway to a first plurality of metallization layers. The first bonding pad and the second bonding pad in the first substrate are aligned to a third bonding pad and the fourth bonding pad in a second substrate and may be bonded using a direct bonding method. A bond between the first bonding pad and the third bonding pad may provide an electrical pathway between devices on the first substrate and devices on the second substrate.

主权项

1. A semiconductor device comprising:
a first structure comprising:
a first substrate having a first side, the first substrate comprising a first semiconductor substrate;a first metallization layer on the first side of the first substrate;a first passivation layer on the first metallization layer;a first conductive pad in the first metallization layer; anda first bonding pad and a first via in the first passivation layer, the first via being interposed between the first bonding pad and the first conductive pad, the first bonding pad and the first via being in direct electrical contact, and the first via and the first conductive pad being in direct electrical contact; a second structure directly bonded to the first structure, the second structure comprising:
a second substrate having a second side, the second side facing the first side, the second substrate comprising a second semiconductor substrate;a second metallization layer on the second side of the second substrate;a second passivation layer on the second metallization layer;a second conductive pad in the second metallization layer; anda second bonding pad in the second passivation layer, the second bonding pad being in direct electrical contact with the second conductive pad; and wherein the second structure is bonded to the first structure such that the first bonding pad and the second bonding pad are aligned with respect to each other.