Method and Apparatus for Measuring the Electrical Property of TFT

摘要

The present invention discloses a method and an apparatus for measuring the electrical property of TFT. The method for measuring the electrical property of TFT comprises: providing two source-drain test units respectively connected with source drain metals, and a gate test unit connected with a gate metal; applying a first voltage on the gate test unit, applying a second voltage on the two ends of the two source-drain test units, so that a doped amorphous silicon semiconductor contacting with the source-drain test units is turned on; and measuring the current between the two source-drain test units. In the embodiment of the present invention, it can not only quickly and easily obtain the ohmic contact resistance between the source drain metals and the doped amorphous silicon semiconductor, but also understand the changes of the ohmic contact resistance by measuring the current variation, which facilitates to monitor the electrical property of TFT.

主权项

1. A method for measuring the electrical property of TFT, comprising:
providing two source-drain test units respectively connected with source drain metals, and a gate test unit connected with a gate metal; applying a first voltage on the gate test unit, applying a second voltage on the two ends of the two source-drain test units, so that a doped amorphous silicon semiconductor contacting with the source-drain test units is turned on; and measuring the current between the two source-drain test units.