| 摘要 |
In this etching method, a mask pattern is formed on a double layer structure configured from a metal layer and a metal oxide layer. A region of the metal oxide layer is removed by performing plasma etching to the double layer structure, said plasma etching using a fluorine-based gas. A surface section of a region of the metal layer is cleaned using a cleaning liquid capable of dissolving aluminum fluoride. Etching is performed through the mask pattern, and the region of the metal layer is removed. |
