METHOD FOR PREPARING SILICIDE OF A SEMICONDUCTOR DEVICE AND A SOURCE/DRAIN FOR USE IN THE SEMICONDUCTOR DEVICE

摘要

Provided herein is a method for forming silicide of a semiconductor device and a source/drain for use in the semiconductor device, the method including preparing a silicon substrate that includes silicon; depositing ytterbium, refractory metal and transition metal nitride on the silicon substrate so that the ytterbium and the refractory metal form an ytterbium alloy thin film and the transition metal nitride form a capping layer; and heating the silicon substrate to form ytterbium silicide on an interface between the silicon substrate and the ytterbium alloy thin film.

主权项

1. A method for forming silicide of a semiconductor device, the method comprising:
preparing a silicon substrate that includes silicon; depositing ytterbium, refractory metal and transition metal nitride on the silicon substrate so that the ytterbium and the refractory metal form an ytterbium alloy thin film and the transition metal nitride form a capping layer; and heating the silicon substrate to form ytterbium silicide on an interface between the silicon substrate and the ytterbium alloy thin film.