Nitride Underlayer and Fabrication Method Thereof

摘要

A nitride layer with embedded hole structure can be used for fabricating GaN-based LED of high external quantum efficiency through epitaxial growth. The approaches can have advantages such as reducing the complexity chip process for forming hole structure, reducing impacts from the chip process on chip reliability, effective reduction of hole structure size and increase of device stability, crush resistance, and reliability. A fabrication method of an underlayer structure with embedded micro-hole structure is also provided.

主权项

1. A nitride underlayer fabrication method, comprising:
providing a patterned substrate with lattice planes of different growth rates; growing a nitride nucleating layer over the pattern substrate; forming a first nitride layer under quasi two-dimensional growth conditions over the nitride nucleating layer; forming a second nitride layer over the first nitride layer under three-dimensional growth conditions, wherein a gap is formed between the second nitride layer and the substrate; growing a third nitride layer, which forms a surface over the gap to thereby form a hole structure over the nitride underlayer; wherein, the quasi two-dimensional growth conditions include a ratio between horizontal and vertical growth rates being between those of two-dimensional growth conditions and three-dimensional growth conditions.