| 摘要 |
PROBLEM TO BE SOLVED: To improve an opening ratio of a semiconductor device.SOLUTION: The semiconductor device comprises a pixel part and a drive circuit which are formed on the same substrate. The pixel part includes a thin film transistor 420 which has a gate electrode layer 421 on the substrate, gate insulation layers 402a, 402b on the gate electrode layer, an oxide semiconductor layer 422 on the gate insulation layer, a source electrode layer 409a and a drain electrode layer 409b which are on the oxide semiconductor layer, a protective insulation layer 403 formed on each layer and contacts a part of the oxide semiconductor layer, and a pixel electrode layer 427 on the protective insulation layer. The gate electrode layer, the gate insulation layer, the oxide semiconductor layer, the source electrode layer, the drain electrode layer, the protective insulation layer and the pixel electrode layer of the thin film transistor 420 are translucent. A source electrode layer 415a and a drain electrode layer 415b of a thin film transistor 410 of the drive circuit are made of material different from that of the source electrode layer and the drain electrode layer of the thin film transistor 420, which is conductive material having resistance lower than that of the source electrode layer and the drain electrode layer of the thin film transistor 420. |
