MANUFACTURING METHOD FOR β-GA2O3 SINGLE CRYSTAL LAYER, SAPPHIRE SUBSTRATE HAVING β-GA2O3 SINGLE CRYSTAL LAYER, FREE-STANDING β-GA2O3 SINGLE CRYSTAL AND MANUFACTURING METHOD THEREFOR

摘要

The present invention addresses the problem of providing an easy and low-cost manufacturing method for a β-Ga2O3 single crystal layer using vapor phase epitaxy, a sapphire substrate having a β-Ga2O3 single crystal layer, and a β-Ga2O3 free-standing single crystal, and a manufacturing method therefor. The problem can be solved by using a manufacturing method for a β-Ga2O3 single crystal layer characterized by using a single crystal substrate having a surface that has a similar atomic arrangement to the plane in which a β-Ga2O3 crystal epitaxially grows but is not rotationally symmetrical, and forming a β-Ga2O3 single crystal layer on the surface not having rotational symmetry. Also provided is a sapphire substrate having a β-Ga2O3 single crystal layer and a free-standing β-Ga2O3 single crystal and a manufacturing method therefor.