| 摘要 |
The purpose of the present invention is to suppress the generation of voids in a semiconductor device. These semiconductor devices (210, 220) are provided with semiconductor elements (211, 221), a plurality of signal lines (212, 222), and a protective layer (240). In the semiconductor devices, the semiconductor elements are provided on a substrate (250). The plurality of signal lines in the semiconductor devices are connected to the semiconductor elements on the substrate. The protective layer of the semiconductor devices is provided in a region between signal lines that is surrounded by the ends of two adjacent signal lines from among the plurality of signal lines on the substrate. |
