| 摘要 |
A signal-transmission-line structure includes a substrate, a through-silicon via (TSV) trench, a conductive substance, at least a conductor wire, and a dielectric layer. The substrate has a first surface and a second surface opposite to each other. The TSV trench is formed in the first surface of the substrate and extends along the first surface. The bottom surface of the TSV trench is located between the first surface and the second surface of the substrate. The TSV trench is filled with the conductive substance to form a transmission line. The conductor wire is located above the transmission line. The dielectric layer is located on the first surface of the substrate, and separates the conductor wire from the transmission line. |
| 主权项 |
1. An electronic device using a signal-transmission-line structure, comprising:
a signal-transmission-line structure, comprising:
a substrate, having a first surface and a second surface opposite to each other;a through-silicon via (TSV) trench, formed in the first surface and extending along the first surface, wherein the bottom surface of the TSV trench is located between the first surface and the second surface;a conductive substance, wherein the TSV trench is filled with the conductive substance to form a transmission line;at least a first conductor wire, located above the transmission line; anda dielectric layer, located on the first surface and separating the at least a first conductor wire from the transmission line; a front-stage circuit, coupled to one end of the transmission line and one end of the at least a first conductor wire; and a post-stage circuit, coupled to the other end of the transmission line and the other end of the at least a first conductor wire, wherein, the front-stage circuit and the post-stage circuit have different characteristic impedances or different phases, and the signal-transmission-line structure is used for adjusting the characteristic impedance or the phase. |
