| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device that implements a normally-off operation.SOLUTION: A semiconductor device has a first semiconductor layer formed of AlGaN, a second semiconductor layer which is provided on the first semiconductor layer and formed of non-doped or n-type AlGaN, a first electrode provided on the second semiconductor layer, a second electrode provided on the second semiconductor layer, a third semiconductor layer which is provided between the first electrode and the second electrode on the second semiconductor layer to be separated from the first electrode and the second electrode, and is formed of p-type AlGaN(0≤Z<1), a control electrode provided on the third semiconductor layer, a fourth semiconductor layer which is provided between the first electrode and the control electrode on the third semiconductor layer to be separated from the control electrode, and formed of n-type AlGaN, and a fifth semiconductor layer which is provided between the control electrode and the second electrode on the third semiconductor layer to be separated from the control electrode, and is formed of n-type AlGaN. |
