发明名称 SPECTRUM DETECTOR
摘要 A spectrum detector includes a substrate, a photodetector formed on the substrate and including a semiconductor having a plurality of convex portions, and a wavelength detection circuit for detecting a wavelength of light transmitted through the plurality of convex portions. Each photodetector comprises different convex portions different from one another with respect to at least one of size, pitch, and height. The photodetectors have a relationship expressed by formula L·m=λ·cos θ/(2n), wherein L is a diameter of each convex portion, n is a refractive index between the air and each convex portion of the GaN layer, m is an integer or a reciprocal of an integer, λ is a wavelength of light transmitted through the plurality of convex portions of each photodetector, and θ is an incident angle of the light with respect to a surface of the p-GaN layer.
申请公布号 US2015276475(A1) 申请公布日期 2015.10.01
申请号 US201514678557 申请日期 2015.04.03
申请人 SAKAI Shiro;Seoul Viosys Co., Ltd. 发明人 SAKAI Shiro;SEO Won Chul;KIM Dae Won
分类号 G01J3/02;G01J3/42 主分类号 G01J3/02
代理机构 代理人
主权项 1. A spectrum detector, comprising: a substrate; photodetectors arranged on the substrate, photodetectors comprising a semiconductor having a plurality of convex portions; and a wavelength detection circuit configured to detect a wavelength of light transmitted through the plurality of convex portions, wherein each photodetector comprises different convex portions different from one another with respect to at least one of size, pitch, and height, and wherein the wavelength detection circuit is configured to detect a wavelength of light transmitted through the plurality of convex portions of each photodetector, wherein the photodetectors have a relationship expressed by formula (1), L·m=λ·cos θ/(2n)  (1) wherein L is a diameter of each convex portion, n is a refractive index between the air and each convex portion of the GaN layer, m is an integer or a reciprocal of an integer, λ is a wavelength of light transmitted through the plurality of convex portions of each photodetector, and θ is an incident angle of the light with respect to a surface of the p-GaN layer.
地址 Tokushima-shi JP