| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a semiconductor device which has high high-temperature reverse bias withstand and high surge voltage withstand in a forward bias state.SOLUTION: A semiconductor device 100 comprises: a semiconductor substrate 110 having a first semiconductor layer 112, a second semiconductor layer 114 and a third semiconductor layer 116; a first peripheral tapered region 120 formed on a region which surrounds a first mesa region 122 on the side of a first principal surface; a second peripheral tapered region 130 formed on a region which surrounds a second mesa region 132 formed at a position on the side of a second principal surface, the position corresponding to the first mesa region 122; and an electrode layer 160 which is formed on a surface of the semiconductor substrate 110 in the second mesa region 132 and the second peripheral tapered region 130, and which forms Schottky junction with the second semiconductor layer 114 and forms ohmic junction with the third semiconductor layer 116.</p> |
