发明名称 |
METHODS FOR MANUFACTURING SEMICONDUCTOR DEVICES |
摘要 |
There is disclosed a method for manufacturing a semiconductor device comprising two opposite types of MOSFETs formed on one semiconductor substrate, the method comprising: forming a portion of the MOSFET on the semiconductor substrate, said portion of said MOSFET comprising source/drains regions located in the semiconductor substrate, a dummy gate stack located between the source/drain region and above the semiconductor substrate and a gate spacer surrounding the dummy gate stack; removing the dummy gate stack of said MOSFET to form a gate opening which exposes the surface of the semiconductor substrate; forming an interfacial oxide layer on the exposed surface of the semiconductor structure; forming a high-K gate dielectric on the interfacial oxide layer within the gate opening; forming a first metal gate layer on the high-K gate dielectric; implanting doping ions in the first metal gate layer; forming a second metal gate layer on the first metal gate layer to fill up the gate opening; and annealing to diffuse and accumulate the doping ions at an upper interface between the high-K gate dielectric and the first metal gate layer and at a lower interface between the high-K gate dielectric and the interfacial oxide, and generating an electric dipole at the lower interface between the high-K gate dielectric and the interfacial oxide by interfacial reaction. |
申请公布号 |
US2015279745(A1) |
申请公布日期 |
2015.10.01 |
申请号 |
US201214233320 |
申请日期 |
2012.12.07 |
申请人 |
Institute of Microelectronics, Chinese Academy of Sciences |
发明人 |
Xu Qiuxia;Zhu Huilong;Xu Gaobo;Zhou Huajie;Liang Qingqing;Chen Dapeng;Zhao Chao |
分类号 |
H01L21/8238 |
主分类号 |
H01L21/8238 |
代理机构 |
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代理人 |
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主权项 |
1. A method for manufacturing a semiconductor device having two opposite types of MOSFETs formed on one semiconductor substrate, comprising:
forming a portion of the MOSFET on the semiconductor substrate, said portion of said MOSFET comprising source/drain regions located in the semiconductor substrate, a dummy gate stack located between the source/drain regions and above the semiconductor substrate and a gate spacer surrounding the dummy gate stack; removing the dummy gate stack of said MOSFET to form a gate opening which exposes the surface of the semiconductor substrate; forming an interfacial oxide layer on the exposed surface of the semiconductor structure; forming a high-K gate dielectric on the interfacial oxide layer within the gate opening; forming a first metal gate layer on the high-K gate dielectric; implanting doping ions in the first metal gate layer; forming a second metal gate layer on the first metal gate layer to fill the gate opening; and annealing to diffuse and accumulate the doping ions at an upper interface between the high-K gate dielectric and the first metal gate layer and at a lower interface between the high-K gate dielectric and the interfacial oxide, and generating an electric dipole at the lower interface between the high-K gate dielectric and the interfacial oxide by interfacial reaction. |
地址 |
Beijing CN |