SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

摘要

Provided is a method for manufacturing a semiconductor device. The method for manufacturing the semiconductor device includes the steps of: forming an interlayer insulating layer, including a trench, on a substrate; forming a high-k dielectric layer in the trench; successively forming a diffusion layer and a blocking layer on the high-k dielectric layer; subsequently performing annealing on the substrate; successively removing the blocking layer and the diffusion layer after the annealing; forming a first barrier layer on the high-k dielectric layer; successively forming a work function control layer, a second barrier layer, and a gate metal on the first barrier layer; and forming a capping layer on the gate metal.