发明名称 SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING THE SAME, CIRCUIT SUBSTRATE, ELECTRO-OPTICAL APPARATUS, AND ELECTRONIC EQUIPMENT
摘要 A semiconductor device is provided with a plurality of protrusions which are made of a resin and which protrude higher than electrodes, and conductive layers which are electrically connected to the electrodes and which cover the top surfaces of the protrusions. A method for manufacturing the semiconductor device includes a step of applying a layer of the resin to the semiconductor device except for the electrodes, a step of patterning the conductive layers on the electrodes and the layer of the resin in accordance with the protrusions, and a step of removing the layer of the resin located between the conductive layers by the use of the patterned conductive layers as masks so as to form the protrusions.
申请公布号 US2015279801(A1) 申请公布日期 2015.10.01
申请号 US201514740603 申请日期 2015.06.16
申请人 Seiko Epson Corporation 发明人 ITO Haruki
分类号 H01L23/00 主分类号 H01L23/00
代理机构 代理人
主权项 1. A semiconductor device comprising: a substrate having a first surface; a first electrode disposed over the first surface; a second electrode disposed over the first surface, the first electrode and the second electrode being arranged along a first direction; an insulating layer disposed over the first surface, the insulating layer having a first opening penetrating to the first electrode and a second opening penetrating to the second electrode; a resin layer disposed over the insulating layer apart from the first opening, wherein the resin layer is disposed in a second direction that crosses the first direction; and a first conductive electrode disposed over the resin layer, wherein the first conductive electrode is electrically connected to the first electrode and extends along the second direction, wherein a longitudinal direction of the first conductive electrode is the second direction.
地址 Tokyo JP