发明名称 |
SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING THE SAME, CIRCUIT SUBSTRATE, ELECTRO-OPTICAL APPARATUS, AND ELECTRONIC EQUIPMENT |
摘要 |
A semiconductor device is provided with a plurality of protrusions which are made of a resin and which protrude higher than electrodes, and conductive layers which are electrically connected to the electrodes and which cover the top surfaces of the protrusions. A method for manufacturing the semiconductor device includes a step of applying a layer of the resin to the semiconductor device except for the electrodes, a step of patterning the conductive layers on the electrodes and the layer of the resin in accordance with the protrusions, and a step of removing the layer of the resin located between the conductive layers by the use of the patterned conductive layers as masks so as to form the protrusions. |
申请公布号 |
US2015279801(A1) |
申请公布日期 |
2015.10.01 |
申请号 |
US201514740603 |
申请日期 |
2015.06.16 |
申请人 |
Seiko Epson Corporation |
发明人 |
ITO Haruki |
分类号 |
H01L23/00 |
主分类号 |
H01L23/00 |
代理机构 |
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代理人 |
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主权项 |
1. A semiconductor device comprising:
a substrate having a first surface; a first electrode disposed over the first surface; a second electrode disposed over the first surface, the first electrode and the second electrode being arranged along a first direction; an insulating layer disposed over the first surface, the insulating layer having a first opening penetrating to the first electrode and a second opening penetrating to the second electrode; a resin layer disposed over the insulating layer apart from the first opening, wherein the resin layer is disposed in a second direction that crosses the first direction; and a first conductive electrode disposed over the resin layer, wherein the first conductive electrode is electrically connected to the first electrode and extends along the second direction, wherein a longitudinal direction of the first conductive electrode is the second direction. |
地址 |
Tokyo JP |