发明名称 GRINDING METHOD OF WAFER
摘要 <p><P>PROBLEM TO BE SOLVED: To secure an original area of a device forming region even after finishing grinding and to efficiently perform grinding without reducing the number of obtained semiconductor chips in grinding a rear face where a recess is formed by two-stage grinding for performing finishing grinding after rough grinding. <P>SOLUTION: The recess 1A is formed in a region corresponding to the device forming region 4 at a rear face of a wafer 1 by a rough grinding stone wheel 45 of a rough grinding unit 40A, and a circular convex part 5A at a periphery is formed at the same time. An inner side 5B of the recess 1A is previously ground by a finishing grinding stone wheel 45 of a finishing grinding unit 40B, and a base 4a is ground. <P>COPYRIGHT: (C)2008,JPO&INPIT</p>
申请公布号 JP2008098351(A) 申请公布日期 2008.04.24
申请号 JP20060277525 申请日期 2006.10.11
申请人 DISCO ABRASIVE SYST LTD 发明人 YOSHIDA SHINJI;NAGAI OSAMU
分类号 H01L21/304 主分类号 H01L21/304
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