Extreme Ultraviolet (EUV) Detectors Based Upon Aluminum Nitride (ALN) Wide Bandgap Semiconductors

摘要

Disclosed are detector devices and related methods. In an Al EUV detector a low temperature AlN layer is deposed above an AlN buffer layer. In one embodiment, the low temperature AlN layer is deposed at about 800° C. Pulsed NH3 is used when growing an AlN epilayer above the low temperature layer. Numerous embodiments are disclosed.