| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To concurrently form a source electrode and a drain electrode with uniform thickness through the use of a side face of a gate electrode in a field effect transistor using the side face of the gate electrode as a channel region. <P>SOLUTION: The field effect transistor includes a substrate 1, the gate electrode 2 having a first side face 2a, an upper surface 2b and a second side face 2c, a first electrode 4 constituting one of the source electrode and the drain electrode, a second electrode 5 constituting the other, and a semiconductor layer 6. The second side face 2c is formed to be inclined toward the second electrode 5 so that a gradient angle (a) from the direction of a normal line of the substrate 1 is in a range of 0<a≤30°. The first side face 2a is formed to be inclined in the same direction as the second side face 2c so that a gradient angle b from the direction of the normal line of the substrate 1 is in a range of 0<b<90°. The first electrode 4 and the second electrode 5 are divided by the second side face 2c of the gate electrode 2. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
