| 摘要 |
A method of manufacturing a light emitting device is provided to reduce contact resistance between a p-type semiconductor layer and a transparent electrode by stacking an ICO(Indium Cooper Oxide) film and an ITO(Indium Tin Oxide) film on the upper portion of the p-type semiconductor layer and forming the transparent electrode. A light emitting device comprises a substrate(10), an n-type semiconductor layer(20), an active layer(30) and a p-type semiconductor layer(40). The p-type semiconductor layer comprises a transparent electrode on which an ICO film(50) and an ITO film are stacked. The n-type semiconductor layer is exposed by etching the transparent electrode, the p-type semiconductor layer and the active layer. An n-type electrode(70) is formed on the n-type semiconductor layer. The p-type semiconductor layer is exposed by etching the transparent electrode, and a p-type electrode(80) is formed to be connected with the p-type semiconductor layer. Further, the p-type electrode can be formed on the upper portion of the transparent electrode, or a flip-chip bonding can be performed without forming the p-type electrode.
|
