A quantum dot thermistor structure and use thereof

摘要

The present invention provides a solid state structure (2) for thermal sensing. The solid state structure comprises a thermistor layer (12) having quantum dots (QD) embedded in a barrier material (BM). Using such a structure, high temperature coefficient for a wide range of material combinations can be obtained. Further, such structures enable the realisation of efficient thermal detectors suitable for e.g. infrared detection applications.