| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve light take-out efficiency in a nitride semiconductor light emitting diode element including a stripe protrusion/recess structure. <P>SOLUTION: The nitride semiconductor light emitting diode 10 comprises: a transparent substrate 11 having a stripe protrusion/recess structure on the surface; and a nitride semiconductor layer N formed to fill the protrusion/recess structure. The nitride semiconductor layer N has a refractive index higher than that of the transparent substrate 11, and includes a light emitter. When the element is viewed from the upper surface, the nitride semiconductor layer N has a square shape and the longitudinal direction of the stripe protrusion/recess structure is not parallel with any one of four sides of the square nitride semiconductor layer N. Since the nitride semiconductor light emitting diode 10 has high emission efficiency, it can be employed suitably as a light source for an illuminator. <P>COPYRIGHT: (C)2008,JPO&INPIT |
