| 摘要 |
A semiconductor device includes a transistor with a semiconductor film formed above a substrate that has at least one insulating surface; a source electrode coupled to a source region of the transistor; and a drain electrode coupled to a drain region of the transistor. The source region and the drain region of the transistor are formed of a plurality of substantially single-crystal grains contained in the semiconductor film. Each of the plurality of substantially single-crystal grains is formed corresponding to one of a plurality of recesses formed in the substrate. Electrical coupling between the drain region and the drain electrode or electrical coupling between the source region and the source electrode is made by using a conductive material disposed in a contact hole. The area of one of the plurality of substantially single-crystal grains is smaller than the sectional area of the contact hole.
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