| 发明名称 |
CVD FILM FORMING METHOD AND CVD FILM FORMING APPARATUS |
| 摘要 |
<p>A wafer (W) is arranged on a susceptor (22) in a chamber (21), and a metal film is formed on the surface of a wafer (W) by continuously supplying the chamber (21) with a metal compound gas from a metal compound gas supplying section (51) and a reducing organic compound gas from a reducing organic compound gas supplying section (52) of a gas supplying mechanism (50).</p> |
| 申请公布号 |
WO2008015914(A1) |
申请公布日期 |
2008.02.07 |
| 申请号 |
WO2007JP64197 |
申请日期 |
2007.07.18 |
| 申请人 |
MIYOSHI, HIDENORI;TOKYO ELECTRON LIMITED |
发明人 |
MIYOSHI, HIDENORI |
| 分类号 |
C23C16/18;H01L21/02;H01L21/28;H01L21/285 |
主分类号 |
C23C16/18 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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