Device for the production of silicon for use in solar cells, comprises housing having wall, which has interior area that bounds a chamber, thermal energy sources, and quartz source inlet

摘要

The device for the production of silicon for use in solar cells, comprises a housing (22) having a wall, which has an interior area that bounds a chamber (28), three thermal energy sources (40, 42, 44) arranged near to the housing to deliver thermal energy to the chamber, a quartz source inlet (46) arranged at an end of the device and connected with the chamber to bring hydrocarbons into the chamber, and a gas outlet arranged at the end of the device and connected with the chamber. The device for the production of silicon for use in solar cells, comprises a housing (22) having a wall, which has an interior area that bounds a chamber (28), three thermal energy sources (40, 42, 44) arranged near to the housing to deliver thermal energy to the chamber, a quartz source inlet (46) arranged at an end of the device and connected with the chamber to bring hydrocarbons into the chamber, a gas outlet arranged at the end of the device and connected with the chamber to release the gas from the inside of the chamber to outside of the chamber, a silicon outlet arranged at an opposite end of the device and connected with the chamber to discharge the produced silicon, an oven with zones, a gas inlet arranged at opposite end of the device to supply a scavenging gas, and a hydrocarbon inlet (48) having an embedded tube to supply a coolant through the tube. The first thermal energy source is arranged to raise the temperature of more than 600[deg]C in first zone, the second thermal energy source is arranged to raise the temperature of more than 1600[deg]C in the second zone and the third thermal energy source is arranged to raise the temperature of more than 2000[deg]C in third zone. The temperature of the zones is controlled independently. The device is arranged to separate the hydrocarbon to form a coating that has carbon on the grain. The average size of the grain is 1 micrometer to 5 centimeter. The molar ratio of the quartz and carbon in the grain is 1:2. The hydrocarbon and the quartz source are continuously promoted to an end of the device and the produced silicon is collected at another end of the device.